Overview
Sputter deposition is a technique used to deposit thin films of a material onto a surface
(substrate). Atoms and ions of a given material are made to collide. The resulting
momentum exchange disperses incident ions which further perpetuate activity setting
off collision cascades in the target. This activity drives the sputtering process. When
such cascades recoil and reach the target surface with an energy above the surface
binding energy, and atom can be ejected. If the target is thin on an atomic scale the
collision cascade can reach the back side of the target and atoms can escape the
surface binding energy in transmission. The average number of atoms ejected from the
target per incident ion is called the “sputter yield” and depends on the ion incident
angle, the energy of the ion, the masses of the ion and target atoms, and the surface
Features
≻ Ideal for Individual Sputtering of metal and non-metal
≻ Multi-Layer Deposition
Multiple cathode assemblies provide for sequential multi-layer or complex alloy deposition in Situ.
≻ Cross driven wafer transfer
These systems have two process chamber and one loadlock chamber. After process chamber
has been completed the process, wafer transfer equipment transports the sample to another chamber automatically.
Process Chamber | Two, Stainless steel |
Vacuum Pumping Station | Turbo molecular pump |
Loadlock Chamber | Stainless steel |
Substrate Heating Unit | 2”, 3”, 4”, 6”, 8” |
Sample Loading/Unloading Unit | Two transfer (Option: Robot arm) |
Pressure Control Unit | Auto / Semi-auto / Manual |
Vacuum Gauge Controller | ATM ~ 1.0E-10Torr |
Gas Supply Unit | MFC (Ar, O2, N2, H2, etc..) |
Power Supply Unit | RF / DC / Pulsed DC |
Target Size | 2”, 3”, 4” |
Film Thickness Uniformity | Less than ±5% |
Ultimate Pressure | Less than 5.0E-9Torr @ Metal Less than 5.0E-7Torr @ Non-metal |