Products Detail
Excimer laser annealing system
Products Introduction
Model | LPA-EXA100 |
Laser type | XeCl |
Wave Length | 308 mm |
Pulse repetion rate | < 30 Hz |
Average energy | < 500mJ |
Power stability | 5 % |
Warming up | 30 min. |
Gas lifetime | 20 x 10e6 pulses |
Beam dimension | 10 x 20 ㎟ |
Beam divergence | 3 x 10 mrad |
Laser tube lifetime | 1 I 109 pulses |
Cooling | Water |
- Amorphous silicon annealing system by excimer laser
- Amorphous silicon is changed to polycrystalline sillicon after melting in a moment during being irradiated by XeCl excimer laser.
- TFT LCD annealing process