Showerhead type Plasma-Enhanced ALD (PE-ALD)
ㆍPlasma process & treatment
ㆍAdjustable the gap between showerhead and substrate
ㆍVariable gas delivery system : Bubbler, Vaporizer, LDS
ㆍCompletely separated source delivery
ㆍConfiguration ALD/CVD mode process
ㆍGood film uniformity & quality
ㆍProcess temperature : up to 500°C
ㆍPrecursor canister : 4EA(standard)
ㆍSubstrate Size : 4 ~ 12” wafer
ㆍApplications
Dielectric thin films : Al2O3, HfO2, ZrO2, TiO2, ZnO2, ZnS, GST, Laminate films, etc.
Nitride films : AlN, TiN, TiAlN, TaN, etc.
Metal films : Ru, Co, Ti, Ni, etc.