Overview
Sputter deposition is a technique used to deposit thin films of a material onto a surface
(substrate). Atoms and ions of a given material are made to collide. The resulting
momentum exchange disperses incident ions which further perpetuate activity setting
off collision cascades in the target. This activity drives the sputtering process. When
such cascades recoil and reach the target surface with an energy above the surface
binding energy, and atom can be ejected. If the target is thin on an atomic scale the
collision cascade can reach the back side of the target and atoms can escape the
surface binding energy in transmission. The average number of atoms ejected from the
target per incident ion is called the “sputter yield” and depends on the ion incident
angle, the energy of the ion, the masses of the ion and target atoms, and the surface
binding energy of atoms in the target.
Features
≻ Ion Beam Sputtering
Permits independent control over the energy and the current density of the bombarding ions.
≻ Ion Beam Sources
Permits Sputtered coatings to be deposited at very low inert working-gas pressure (<10-4Torr)
onto substrates not in contact with a plasma.
≻ Good Film Thickness Uniformity
Even with targets of same diameter as substrate.
≻ Low Pressure Process
Maintains discharge at a pressure range of about 10-4Torr (roughly one order of magnitude
lower than the conventional sputter discharge pressure.)
Process Chamber | Stainless steel |
Vacuum Pumping Station | Turbo molecular pump |
Loadlock Chamber | N/A (Optional item) |
Substrate Heating Unit | SiC / 4”, 6”, 8” |
Sample Loading/Unloading Unit | N/A (Optional item w / Loadlock chamber) |
Pressure Control Unit | Auto / Semi-auto |
Vacuum Gauge Controller | Vacuum Gauge Controller |
Gas Supply Unit | Gas Supply Unit |
Power Supply Unit | |
Target Size | 2”, 3”, 4”, 6” |
Film Thickness Uniformity | Less than ±5% |
Ultimate Pressure | Less than 5.0E-7Torr |